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| UPB586G资料 | |
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UPB586G PDF Download |
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File Size : 116 KB
Manufacturer:NEC Description:These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits. |
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| 1PCS | 100PCS | 1K | 10K | ||
| 价 格 | |||||
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型 号：UPB586G 厂 家：NEC 封 装：SOP8 批 号：0450+ 数 量：965 说 明：原装正品，长期稳定供应 |
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运 费： 所在地： 新旧程度： |
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| 联系人：林小姐 |
| 电 话：086-755-23815997 |
| 手 机：13632589437 |
| QQ：1097182423,2851921558 |
| MSN： |
| 传 真：0755-23815984 |
| EMail：joylin@hongbotong.com |
| 公司地址： 深圳市福田区深南中路3006号佳和大厦B座2007室 |
