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| TLE4276GV资料 | |
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TLE4276GV PDF Download |
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File Size : 116 KB
Manufacturer:INFINEON Description:ADSC write accesses are initiated when the following condi- tions are satisfied: (1) ADSC is asserted LOW, (2) ADSP is deasserted HIGH, (3) CE1, CE2, CE3 are all asserted active, and (4) the appropriate combination of the write inputs (GW, BWE, and BW[A:D]) are asserted active to conduct a write to the desired byte(s). ADSC-triggered write accesses require a single clock cycle to complete. The address presented to A[16:0] is loaded into the address register and the address advancement logic while being delivered to the RAM core. The ADV input is ignored during this cycle. If a global write is conducted, the data presented to the DQs and DQPs is written into the corresponding address location in the RAM core. If a byte write is conducted, only the selected bytes are written. Bytes not selected during a byte write operation will remain unaltered. A synchronous self-timed write mechanism has been provided to simplify the write operations. |
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| 1PCS | 100PCS | 1K | 10K | ||
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型 号：TLE4276GV 厂 家：INFINEON 封 装：TO263-5 批 号：08+ 数 量：250 说 明：全新原装，长期稳定供应 |
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运 费： 所在地： 新旧程度： |
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| 联系人：林小姐 |
| 电 话：086-755-23815997 |
| 手 机：13632589437 |
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| EMail：joylin@hongbotong.com |
| 公司地址： 深圳市福田区深南中路3006号佳和大厦B座2007室 |
