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| S5D2508A04-D0B0资料 | |
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S5D2508A04-D0B0 PDF Download |
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File Size : 116 KB
Manufacturer:SAMSUNG Description:| | |JANS level | |Method 3161 (see 4.5.3) | | |Gate stress test (see 4.5.5) | |Method 3470, EAS test (see 4.5.4) | |Subgroup 2 of table I herein | | |IGSS, IDSS1 | | |MIL-STD-750, method 1042 |test condition B | | |IGSSF1, IGSSR1, IDSS1, RDS(on), VGS(TH) |Subgroup 2 of table I herein; | |∆IGSSF1 = 20 nA dc or 100 percent of |initial value, whichever is greater. | |∆IGSSR1 = 20 nA dc or 100 percent of |initial value, whichever is greater. | |∆IDSS1 = 25 µA dc or 100 percent of |initial value, whichever is greater. | |MIL-STD-750, method 1042, test |condition A | | |Subgroups 2 and 3 of table I herein; |∆IGSSF1 = 20 nA dc or 100 percent of |initial value, whichever is greater. | |∆IGSSR1 = 20 nA dc or 100 percent of |initial value, whichever is greater. | |∆IDSS1 = 25 µA dc or 100 percent of |initial value, whichever is greater. | |∆RDS(on)1 = 20 percent of initial value. | |∆VGS(th)1 = 20 percent of initial value. | |
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| 1PCS | 100PCS | 1K | 10K | ||
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型 号：S5D2508A04-D0B0 厂 家：SAMSUNG 封 装：DIP 批 号：2001 数 量：6708 说 明：原装正品，长期稳定供应 |
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