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| PC4N25V资料 | |
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PC4N25V PDF Download |
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File Size : 116 KB
Manufacturer:SHARP Description:System Considerations The power switching characteristics of Advanced CMOS EPROMs require careful decoupling of the devices. The supply current, ICC, has three seg- ments that are of interest to the system designer: the standby current level, the active current level, and transient current peaks that are produced by the falling and rising edges of E. The magnitude of the transient current peaks is dependent on the capacitive and inductive loading of the device at the output. The associated transient voltage peaks can be suppressed by complying with the two line output control and by properly selected decoupling ca- pacitors. It is recommended that a 0.1µF ceramic capacitor be used on every device between VCC and VSS. This should be a high frequency capaci- tor of low inherent inductance and should be placed as close to the device as possible. In addi- tion, a 4.7µF bulk electrolytic capacitor should be used between VCC and VSS for every eight devic- es. The bulk capacitor should be located near the power supply connection point. The purpose of the bulk capacitor is to overcome the voltage drop caused by the inductive effects of PCB traces. |
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| 1PCS | 100PCS | 1K | 10K | ||
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型 号：PC4N25V 厂 家：SHARP 封 装：DIP/SOP 批 号：07+ 数 量：2000 说 明：全新库存，专业SHARP光耦供应商 |
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运 费： 所在地： 新旧程度： |
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| 联系人：林小姐 |
| 电 话：086-755-23815997 |
| 手 机：13632589437 |
| QQ：1097182423,2851921558 |
| MSN： |
| 传 真：0755-23815984 |
| EMail：joylin@hongbotong.com |
| 公司地址： 深圳市福田区深南中路3006号佳和大厦B座2007室 |
