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P83C654FBP/541资料 | |
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P83C654FBP/541 PDF Download |
File Size : 116 KB
Manufacturer:PHI Description:mand. This causes row Ra of bank Ba in the memory compo- nent to be loaded into the sense amp array for the bank. A second request packet at clock edge T1 contains a write (WR) command. This causes the data packet D(a1) at edge T4 to be written to column Ca1 of the sense amp array for bank Ba. A third request packet at clock edge T3 contains another write (WR) command. This causes the data packet D(a2) at edge T6 to be also written to column Ca2. A final request packet at clock edge T14 contains a precharge (PRE) command. |
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1PCS | 100PCS | 1K | 10K | ||
价 格 | |||||
型 号:P83C654FBP/541 厂 家:PHI 封 装:DIP 批 号:2000 数 量:1350 说 明:原装正品,长期稳定供应 |
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