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| OP27GS资料 | |
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OP27GS PDF Download |
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File Size : 116 KB
Manufacturer:ADI Description: The TC55VBM416AFTN is a 16,777,216-bit static random access memory (SRAM) organized as 1,048,576 words by 16 bits/2,097,152 words by 8 bits. Fabricated using Toshiba's CMOS Silicon gate process technology, this device operates from a single 2.3 to 3.6 V power supply. Advanced circuit technology provides both high speed and low power at an operating current of 3 mA/MHz and a minimum cycle time of 55 ns. It is automatically placed in low-power mode at 0.9 µA standby current (at VDD = 3 V, Ta = 25C, typical) when chip enable ( CE1 ) is asserted high or (CE2) is asserted low. There are three control inputs. CE1 and CE2 are used to select the device and for data retention control, and output enable ( OE ) provides fast memory access. Data byte control pin ( LB , UB ) provides lower and upper byte access. This device is well suited to various microprocessor system applications where high speed, low power and battery backup are required. And, with a guaranteed operating extreme temperature range of −40 to 85C, the TC55VBM416AFTN can be used in environments exhibiting extreme temperature conditions. The TC55VBM416AFTN is available in a plastic 48-pin thin-small-outline package (TSOP). |
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| 1PCS | 100PCS | 1K | 10K | ||
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型 号：OP27GS 厂 家：ADI 封 装：SOP 批 号：08+ 数 量：500 说 明：全新原装大量长期供应 |
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运 费： 所在地： 新旧程度： |
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| 联系人：林小姐 |
| 电 话：086-755-23815997 |
| 手 机：13632589437 |
| QQ：1097182423,2851921558 |
| MSN： |
| 传 真：0755-23815984 |
| EMail：joylin@hongbotong.com |
| 公司地址： 深圳市福田区深南中路3006号佳和大厦B座2007室 |
