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MUR120RLG资料 | |
MUR120RLG PDF Download |
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File Size : 116 KB
Manufacturer:ON Description:Honeywells enhanced SOI RICMOS™ IV (Radiation Insen- sitive CMOS) technology is radiation hardened through the use of advanced and proprietary design, layout and pro- cess hardening techniques. The RICMOS™ IV process is a 5-volt, SIMOX CMOS technology with a 150 Å gate oxide and a minimum drawn feature size of 0.75 µm (0.6 µm effective gate lengthLeff). Additional features include tungsten via plugs, Honeywells proprietary SHARP pla- narization process, and a lightly doped drain (LDD) struc- ture for improved short channel reliability. A 7 transistor (7T) memory cell is used for superior single event upset hardening, while three layer metal power bussing and the low collection volume SIMOX substrate provide improved dose rate hardening. |
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1PCS | 100PCS | 1K | 10K | ||
价 格 | |||||
型 号:MUR120RLG 厂 家:ON 封 装:DO-41 批 号:750+CHINA 数 量:280635 说 明:原装正品,大量供应 |
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运 费: 所在地: 新旧程度: |
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联系人:林小姐 |
电 话:086-755-23815997 |
手 机:13632589437 |
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公司地址: 深圳市福田区深南中路3006号佳和大厦B座2007室 |